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onsemi FDD8453LZ

Power Trench MOSFET, N-Channel, 40V, 50A, 6.7m

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Compliance

Lead Free
Lead Free
Radiation Hardening
No
RoHS
Compliant

Dimensions

Height
2.517 mm
Length
6.73 mm
Width
6.22 mm

Physical

Case/Package
TO-252
Contact Plating
Tin
Mount
Surface Mount
Number of Pins
3
Weight
260.37 mg

Supply Chain

Lifecycle Status
Production

Technical

Continuous Drain Current (ID)
16.4 A
Drain to Source Breakdown Voltage
40 V
Drain to Source Resistance
5.8 mΩ
Drain to Source Voltage (Vdss)
40 V
Element Configuration
Single
Fall Time
5 ns
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
3.515 nF
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
3.1 W
Min Operating Temperature
-55 °C
Number of Channels
1
Number of Elements
1
Power Dissipation
3.1 W
Rds On Max
6.7 mΩ
Resistance
6.7 MΩ
Rise Time
6 ns
Turn-Off Delay Time
37 ns
Turn-On Delay Time
11 ns

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