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onsemi FDD6N50TM

N-Channel Power MOSFET, UniFETTM, 500 V, 6 A, 900 m, DPAK

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Compliance

Lead Free
Lead Free
Radiation Hardening
No
RoHS
900 mΩ

Dimensions

Height
2.39 mm
Length
6.73 mm
Width
IBS

Physical

Case/Package
DPAK
Mount
-55 °C
Number of Pins
3
Weight
Compliant

Supply Chain

Lifecycle Status
EOL

Technical

Continuous Drain Current (ID)
6:00 AM
Drain to Source Breakdown Voltage
6 A
Drain to Source Resistance
760 mΩ
Drain to Source Voltage (Vdss)
760 mΩ
Element Configuration
Single
Fall Time
35 ns
Gate to Source Voltage (Vgs)
30 V
Input Capacitance
2.517 mm
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
150 °C
Min Operating Temperature
-55 °C
Number of Channels
1
Number of Elements
1
Power Dissipation
89 W
Rds On Max
900 mΩ
Resistance
900 mΩ
Rise Time
900 mΩ
Turn-Off Delay Time
25 ns
Turn-On Delay Time
55 ns

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