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onsemi FDD6680A

N-Channel, Logic Level, PowerTrench MOSFET MOSFET N-CH 30V 14A DPAK

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Compliance

RoHS
9.5 mΩ

Physical

Case/Package
TO-252
Mount
-55 °C
Number of Pins
3

Technical

Continuous Drain Current (ID)
56 A
Drain to Source Breakdown Voltage
30 V
Drain to Source Resistance
7 mΩ
Drain to Source Voltage (Vdss)
7 mΩ
Element Configuration
Single
Fall Time
13 ns
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
1.425 nF
Max Operating Temperature
175 °C
Max Power Dissipation
175 °C
Min Operating Temperature
-55 °C
Number of Elements
1
Power Dissipation
2.8 W
Rds On Max
9.5 mΩ
Rise Time
9 ns
Threshold Voltage
1.8 V
Turn-Off Delay Time
Compliant

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