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onsemi FDD5612

N-Channel PowerTrench MOSFET, 60V, 18A, 55m

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Compliance

Lead Free
Lead Free
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
Compliant

Dimensions

Height
2.517 mm
Length
6.73 mm
Width
6.22 mm

Physical

Case/Package
TO-252
Mount
Surface Mount
Number of Pins
3
Weight
260.37 mg

Supply Chain

Lifecycle Status
EOL

Technical

Continuous Drain Current (ID)
18 A
Current Rating
18 A
Drain to Source Breakdown Voltage
60 V
Drain to Source Resistance
36 mΩ
Drain to Source Voltage (Vdss)
60 V
Dual Supply Voltage
60 V
Element Configuration
Single
Fall Time
4 ns
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
660 pF
Max Junction Temperature (Tj)
175 °C
Max Operating Temperature
175 °C
Max Power Dissipation
1.6 W
Min Operating Temperature
-55 °C
Nominal Vgs
2.4 V
Number of Channels
1
Number of Elements
1
Packaging
Tape & Reel
Power Dissipation
42 W
Rds On Max
55 mΩ
Resistance
64 MΩ
Rise Time
4 ns
Termination
SMD/SMT
Threshold Voltage
2.4 V
Turn-Off Delay Time
24 ns
Turn-On Delay Time
8 ns
Voltage Rating (DC)
60 V

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