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onsemi FDD4141

Transistor: P-MOSFET, unipolar, -40V, -50A, 12.3ohm, 69W, -55+175 deg.C, SMD, TO252(DPAK)

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Compliance

Lead Free
Lead Free
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
12.3 MΩ

Dimensions

Height
2.39 mm
Length
6.73 mm
Width
6.22 mm

Physical

Case/Package
TO-252
Contact Plating
Tin
Mount
-55 °C
Number of Pins
3
Weight
IBS

Supply Chain

Lifecycle Status
Production

Technical

Continuous Drain Current (ID)
10.8 A
Drain to Source Breakdown Voltage
-40 V
Drain to Source Resistance
10.1 mΩ
Drain to Source Voltage (Vdss)
10.1 mΩ
Element Configuration
Single
Fall Time
15 ns
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
2.517 mm
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
150 °C
Min Operating Temperature
-55 °C
Nominal Vgs
-1.8 V
Number of Channels
1
Number of Elements
1
Packaging
Cut Tape
Power Dissipation
2.4 W
Rds On Max
12.3 mΩ
Resistance
12.3 MΩ
Rise Time
12.3 mΩ
Threshold Voltage
7 ns
Turn-Off Delay Time
Compliant
Turn-On Delay Time
10 ns

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