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onsemi FDD3860

In a Pack of 5, FDD3860 N-Channel MOSFET, 29 A, 100 V PowerTrench, 3-Pin DPAK ON Semiconductor

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Compliance

Lead Free
Lead Free
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
Compliant

Dimensions

Height
2.517 mm
Length
6.73 mm
Width
6.22 mm

Physical

Case/Package
DPAK
Contact Plating
Tin
Mount
Surface Mount
Number of Pins
3
Weight
260.37 mg

Supply Chain

Lifecycle Status
Production

Technical

Continuous Drain Current (ID)
6.2 A
Drain to Source Breakdown Voltage
100 V
Drain to Source Resistance
29 mΩ
Drain to Source Voltage (Vdss)
100 V
Element Configuration
Single
Fall Time
7 ns
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
1.74 nF
Max Junction Temperature (Tj)
175 °C
Max Operating Temperature
175 °C
Max Power Dissipation
3.1 W
Min Operating Temperature
-55 °C
Number of Channels
1
Number of Elements
1
Power Dissipation
3.75 W
Rds On Max
36 mΩ
Resistance
36 MΩ
Rise Time
10 ns
Threshold Voltage
3.8 V
Turn-Off Delay Time
24 ns
Turn-On Delay Time
16 ns

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