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onsemi FDD3690

Transistor, mosfet, n-Channel, 100V V(Br)Dss, 22A I(D), to-252Aa Rohs Compliant: Yes

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Compliance

Lead Free
Lead Free
Radiation Hardening
No
RoHS
64 mΩ

Dimensions

Height
2.517 mm

Physical

Case/Package
TO-252-3
Mount
-55 °C
Weight
IBS

Supply Chain

Lifecycle Status
Production

Technical

Continuous Drain Current (ID)
22 A
Current Rating
22 A
Drain to Source Breakdown Voltage
100 V
Drain to Source Resistance
64 mΩ
Drain to Source Voltage (Vdss)
64 mΩ
Element Configuration
Single
Fall Time
10 ns
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
1.514 nF
Max Junction Temperature (Tj)
175 °C
Max Operating Temperature
175 °C
Max Power Dissipation
175 °C
Min Operating Temperature
-55 °C
Number of Channels
1
Number of Elements
1
Packaging
Tape & Reel
Power Dissipation
60 W
Rds On Max
64 mΩ
Rise Time
6.5 ns
Turn-Off Delay Time
29 ns
Turn-On Delay Time
Compliant
Voltage Rating (DC)
100 V

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