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onsemi FDD3672

N-Channel MOSFET, UltraFET Trench, 100V, 44A, 28m

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Compliance

Lead Free
Lead Free
REACH SVHC
No SVHC
RoHS
Compliant

Dimensions

Height
2.517 mm
Length
6.73 mm
Width
5.59 mm

Physical

Case/Package
TO-252
Contact Plating
Tin
Mount
Surface Mount
Number of Pins
3
Weight
260.37 mg

Supply Chain

Lifecycle Status
Production

Technical

Continuous Drain Current (ID)
44 A
Current Rating
44 A
Drain to Source Breakdown Voltage
100 V
Drain to Source Resistance
24 mΩ
Drain to Source Voltage (Vdss)
100 V
Dual Supply Voltage
100 V
Element Configuration
Single
Fall Time
44 ns
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
1.71 nF
Max Junction Temperature (Tj)
175 °C
Max Operating Temperature
175 °C
Max Power Dissipation
135 W
Min Operating Temperature
-55 °C
Nominal Vgs
4 V
Number of Channels
1
Number of Elements
1
Packaging
Cut Tape
Power Dissipation
135 W
Rds On Max
28 mΩ
Resistance
28 MΩ
Rise Time
59 ns
Termination
SMD/SMT
Threshold Voltage
4 V
Turn-Off Delay Time
26 ns
Turn-On Delay Time
11 ns
Voltage Rating (DC)
100 V

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