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onsemi FDD306P

P-Channel PowerTrench MOSFET, 1.8V Specified, -12V, -6.7A, 28m

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Compliance

Lead Free
Lead Free
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
90 MΩ

Dimensions

Height
2.39 mm
Length
6.73 mm
Width
6.22 mm

Physical

Case/Package
TO-252
Contact Plating
Tin
Mount
-55 °C
Number of Pins
3
Weight
260.37 mg

Supply Chain

Lifecycle Status
Production

Technical

Continuous Drain Current (ID)
6.7 A
Current Rating
-6.7 A
Drain to Source Breakdown Voltage
-12 V
Drain to Source Resistance
21 mΩ
Drain to Source Voltage (Vdss)
21 mΩ
Dual Supply Voltage
-12 V
Element Configuration
Single
Fall Time
41 ns
Gate to Source Voltage (Vgs)
8 V
Input Capacitance
1.29 nF
Max Junction Temperature (Tj)
175 °C
Max Operating Temperature
175 °C
Max Power Dissipation
175 °C
Min Operating Temperature
-55 °C
Nominal Vgs
-500 mV
Number of Channels
1
Number of Elements
1
Packaging
Cut Tape
Power Dissipation
52 W
Rds On Max
28 mΩ
Resistance
90 MΩ
Rise Time
28 mΩ
Threshold Voltage
8 ns
Turn-Off Delay Time
Compliant
Turn-On Delay Time
16 ns
Voltage Rating (DC)
IBS

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