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onsemi FDD18N20LZ

N-Channel Power MOSFET, Logic Level, UniFETTM, 200 V, 16 A, 125 m, DPAK

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Compliance

Lead Free
Lead Free
Radiation Hardening
No
RoHS
Compliant

Dimensions

Height
2.517 mm
Length
6.73 mm
Width
6.22 mm

Physical

Case/Package
DPAK
Contact Plating
Tin
Mount
Surface Mount
Number of Pins
3
Weight
260.37 mg

Supply Chain

Lifecycle Status
Production

Technical

Continuous Drain Current (ID)
16 A
Drain to Source Breakdown Voltage
200 V
Drain to Source Resistance
100 mΩ
Drain to Source Voltage (Vdss)
200 V
Element Configuration
Single
Fall Time
50 ns
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
1.575 nF
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
89 W
Min Operating Temperature
-55 °C
Number of Channels
1
Number of Elements
1
Power Dissipation
89 W
Rds On Max
125 mΩ
Resistance
125 MΩ
Rise Time
20 ns
Turn-Off Delay Time
135 ns
Turn-On Delay Time
15 ns

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