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onsemi FDD10N20LZTM

N-Channel Power MOSFET, UniFETTM, Logic Level, 200 V, 7.6 A, 360 m, DPAK

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Compliance

Radiation Hardening
No
RoHS
Compliant

Dimensions

Height
2.517 mm
Length
6.73 mm
Width
6.22 mm

Physical

Case/Package
DPAK
Mount
Surface Mount
Number of Pins
3
Weight
260.37 mg

Supply Chain

Lifecycle Status
Obsolete

Technical

Continuous Drain Current (ID)
7.6 A
Drain to Source Breakdown Voltage
200 V
Drain to Source Resistance
300 mΩ
Drain to Source Voltage (Vdss)
200 V
Element Configuration
Single
Fall Time
25 ns
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
585 pF
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
56 W
Min Operating Temperature
-55 °C
Number of Channels
1
Number of Elements
1
Power Dissipation
83 W
Rds On Max
360 mΩ
Rise Time
15 ns
Turn-Off Delay Time
55 ns
Turn-On Delay Time
10 ns

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