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onsemi FDC8886

N-Channel Power Trench MOSFET, 30 V, 6.5 A, 23 m

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Compliance

Radiation Hardening
No
RoHS
Compliant

Dimensions

Height
1.1 mm
Length
3 mm
Width
1.7 mm

Physical

Case/Package
SOT-23-6
Mount
Surface Mount
Number of Pins
6
Weight
36 mg

Supply Chain

Lifecycle Status
Production

Technical

Continuous Drain Current (ID)
6.5 A
Drain to Source Breakdown Voltage
30 V
Drain to Source Resistance
19 mΩ
Drain to Source Voltage (Vdss)
30 V
Element Configuration
Single
Fall Time
1 ns
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
465 pF
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
800 mW
Min Operating Temperature
-55 °C
Number of Channels
1
Power Dissipation
1.6 W
Rds On Max
23 mΩ
Rise Time
1 ns
Turn-Off Delay Time
11 ns
Turn-On Delay Time
5 ns

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