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onsemi FDC86244

N-Channel Shielded Gate Power Trench MOSFET, 150 V, 2.3 A, 144 m

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Compliance

Lead Free
Lead Free
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
Compliant

Dimensions

Height
1 mm
Length
3 mm
Width
1.7 mm

Physical

Case/Package
SOT-23-6
Contact Plating
Tin
Mount
Surface Mount
Number of Pins
6
Weight
36 mg

Supply Chain

Lifecycle Status
Production

Technical

Continuous Drain Current (ID)
2.3 A
Drain to Source Breakdown Voltage
150 V
Drain to Source Resistance
20 mΩ
Drain to Source Voltage (Vdss)
150 V
Element Configuration
Single
Fall Time
3.1 ns
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
345 pF
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
800 mW
Min Operating Temperature
-55 °C
Number of Channels
1
Number of Elements
1
Power Dissipation
1.6 W
Rds On Max
144 mΩ
Rise Time
1.4 ns
Threshold Voltage
2.5 V
Turn-Off Delay Time
10 ns
Turn-On Delay Time
4.7 ns

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