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onsemi FDC8601

N-Channel Shielded Gate Power Trench MOSFET, 100 V, 2.7 A, 109 m

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Compliance

Lead Free
Lead Free
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
109 mΩ

Dimensions

Height
1 mm
Length
3 mm
Width
1.7 mm

Physical

Case/Package
SOT-23-6
Mount
-55 °C
Number of Pins
6
Weight
36 mg

Supply Chain

Lifecycle Status
Production

Technical

Continuous Drain Current (ID)
2.7 A
Drain to Source Breakdown Voltage
100 V
Drain to Source Resistance
86 mΩ
Drain to Source Voltage (Vdss)
86 mΩ
Element Configuration
Single
Fall Time
2 ns
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
1.1 mm
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
150 °C
Min Operating Temperature
-55 °C
Nominal Vgs
3 V
Number of Channels
1
Number of Elements
1
Packaging
Tape and Reel
Power Dissipation
1.6 W
Rds On Max
109 mΩ
Rise Time
1.3 ns
Threshold Voltage
Compliant
Turn-Off Delay Time
7.6 ns
Turn-On Delay Time
IBS

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