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onsemi FDC855N

N-Channel, PowerTrench MOSFET, Logic Level, 30V, 6.1A, 27m

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Compliance

Lead Free
Lead Free
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
Compliant

Dimensions

Height
1.1 mm
Length
3 mm
Width
1.7 mm

Physical

Case/Package
SOT-23-6
Mount
Surface Mount
Number of Pins
6
Weight
36 mg

Supply Chain

Lifecycle Status
Production

Technical

Continuous Drain Current (ID)
6.1 A
Drain to Source Breakdown Voltage
30 V
Drain to Source Resistance
20.7 mΩ
Drain to Source Voltage (Vdss)
30 V
Element Configuration
Single
Fall Time
2 ns
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
655 pF
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
1.6 W
Min Operating Temperature
-55 °C
Nominal Vgs
2 V
Number of Channels
1
Number of Elements
1
Power Dissipation
800 mW
Rds On Max
27 mΩ
Resistance
27 MΩ
Rise Time
2 ns
Threshold Voltage
2 V
Turn-Off Delay Time
14 ns
Turn-On Delay Time
6 ns

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