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onsemi FDC658P

ON SEMICONDUCTOR - FDC658P - MOSFET Transistor, P Channel, 4 A, 30 V, 0.041 ohm, 10 V, 1.7 V

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Compliance

Lead Free
Lead Free
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
50 mΩ

Dimensions

Height
1 mm
Length
3 mm
Width
1.7 mm

Physical

Case/Package
SOT-23-6
Contact Plating
Tin
Mount
-55 °C
Number of Pins
6
Weight
36 mg

Supply Chain

Lifecycle Status
Production

Technical

Continuous Drain Current (ID)
-4 A
Current Rating
-4 A
Drain to Source Breakdown Voltage
-30 V
Drain to Source Resistance
50 mΩ
Drain to Source Voltage (Vdss)
50 mΩ
Element Configuration
Single
Fall Time
16 ns
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
1.1 mm
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
150 °C
Min Operating Temperature
-55 °C
Number of Channels
1
Number of Elements
1
Packaging
Cut Tape
Power Dissipation
1.6 W
Rds On Max
50 mΩ
Resistance
50 mΩ
Rise Time
50 mΩ
Threshold Voltage
14 ns
Turn-Off Delay Time
Compliant
Turn-On Delay Time
12 ns
Voltage Rating (DC)
IBS

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