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onsemi FDC658AP

Transistor MOSFET Positive Channel 30 Volt 4A 6-Pin SuperSOT T/R

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Compliance

Lead Free
Lead Free
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
50 MΩ

Dimensions

Height
900 µm
Length
3 mm
Width
1.7 mm

Physical

Case/Package
SOT-23-6
Contact Plating
Tin
Mount
-55 °C
Number of Pins
6
Weight
36 mg

Supply Chain

Lifecycle Status
Production

Technical

Continuous Drain Current (ID)
4:00 AM
Drain to Source Breakdown Voltage
4 A
Drain to Source Resistance
44 mΩ
Drain to Source Voltage (Vdss)
44 mΩ
Dual Supply Voltage
-30 V
Element Configuration
Single
Fall Time
12 ns
Gate to Source Voltage (Vgs)
25 V
Input Capacitance
900 µm
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
150 °C
Min Operating Temperature
-55 °C
Nominal Vgs
-1.8 V
Number of Channels
1
Number of Elements
1
Packaging
Cut Tape
Power Dissipation
1.6 W
Rds On Max
50 mΩ
Resistance
50 MΩ
Rise Time
50 mΩ
Termination
12 ns
Threshold Voltage
Compliant
Turn-Off Delay Time
16 ns
Turn-On Delay Time
IBS

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