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onsemi FDC653N

N-Channel Enhancement Mode Field Effect Transistor 30V, 5A, 35m

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Compliance

Lead Free
Lead Free
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
Compliant

Dimensions

Height
1.1 mm
Length
3 mm
Width
1.7 mm

Physical

Case/Package
SOT-23-6
Contact Plating
Tin
Mount
Surface Mount
Number of Pins
6
Weight
30 mg

Supply Chain

Lifecycle Status
Production

Technical

Continuous Drain Current (ID)
5 A
Current Rating
5 A
Drain to Source Breakdown Voltage
30 V
Drain to Source Resistance
35 mΩ
Drain to Source Voltage (Vdss)
30 V
Dual Supply Voltage
30 V
Element Configuration
Single
Fall Time
12 ns
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
350 pF
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
1.6 W
Min Operating Temperature
-55 °C
Nominal Vgs
1.7 V
Number of Channels
1
Number of Elements
1
Packaging
Cut Tape
Power Dissipation
1.6 W
Rds On Max
35 mΩ
Resistance
35 MΩ
Rise Time
12 ns
Termination
SMD/SMT
Threshold Voltage
1.7 V
Turn-Off Delay Time
13 ns
Turn-On Delay Time
7.5 ns
Voltage Rating (DC)
30 V

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