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onsemi FDC6420C

ON SEMICONDUCTOR - FDC6420C - Dual MOSFET, N and P Channel, 3 A, 20 V, 0.05 ohm, 4.5 V, 900 mV

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Compliance

Lead Free
Lead Free
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
Compliant

Dimensions

Height
900 µm

Physical

Case/Package
SOT-23-6
Mount
Surface Mount
Number of Pins
6
Weight
36 mg

Supply Chain

Lifecycle Status
Production

Technical

Continuous Drain Current (ID)
2.2 A
Current Rating
3 A
Drain to Source Breakdown Voltage
20 V
Drain to Source Resistance
70 mΩ
Drain to Source Voltage (Vdss)
20 V
Dual Supply Voltage
20 V
Element Configuration
Dual
Fall Time
12 ns
Gate to Source Voltage (Vgs)
12 V
Input Capacitance
324 pF
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
700 mW
Min Operating Temperature
-55 °C
Nominal Vgs
900 mV
Number of Channels
2
Number of Elements
2
Packaging
Cut Tape
Power Dissipation
960 mW
Rds On Max
70 mΩ
Resistance
70 MΩ
Rise Time
12 ns
Termination
SMD/SMT
Threshold Voltage
900 mV
Turn-Off Delay Time
10 ns

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