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onsemi FDC2612

Transistor, Mosfet, N-channel, 200V V(br)dss, 1.1A I(d), TSOP

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Compliance

Lead Free
Lead Free
REACH SVHC
No SVHC
RoHS
Compliant

Dimensions

Height
1.1 mm
Length
3 mm
Width
1.7 mm

Physical

Case/Package
SOT-23-6
Contact Plating
Tin
Mount
Surface Mount
Number of Pins
6
Weight
36 mg

Supply Chain

Lifecycle Status
Production

Technical

Continuous Drain Current (ID)
1.1 A
Current Rating
1.1 A
Drain to Source Breakdown Voltage
200 V
Drain to Source Resistance
605 mΩ
Drain to Source Voltage (Vdss)
200 V
Element Configuration
Single
Fall Time
6 ns
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
234 pF
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
800 mW
Min Operating Temperature
-55 °C
Number of Channels
1
Number of Elements
1
Power Dissipation
1.6 W
Rds On Max
725 mΩ
Resistance
725 MΩ
Rise Time
6 ns
Threshold Voltage
4 V
Turn-Off Delay Time
17 ns
Turn-On Delay Time
6 ns
Voltage Rating (DC)
200 V

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