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onsemi FDB86135

N-Channel Shielded Gate PowerTrench® MOSFET, 100V, 176A, 3.5mΩ

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Compliance

Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
3.5 mΩ

Dimensions

Height
4.83 mm
Length
10.67 mm
Width
9.65 mm

Physical

Case/Package
TO-263-3
Mount
Surface Mount
Number of Pins
3
Weight
1.31247 g

Supply Chain

Lifecycle Status
Production

Technical

Continuous Drain Current (ID)
75 A
Drain to Source Breakdown Voltage
100 V
Drain to Source Resistance
3.5 mΩ
Drain to Source Voltage (Vdss)
100 V
Element Configuration
Single
Fall Time
11 ns
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
7.295 nF
Max Operating Temperature
175 °C
Max Power Dissipation
227 W
Min Operating Temperature
-55 °C
Packaging
Digi-Reel®
Power Dissipation
Digi-Reel®
Rds On Max
3.5 mΩ
Rise Time
54 ns
Threshold Voltage
2 V
Turn-Off Delay Time
37 ns
Turn-On Delay Time
22 ns

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