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onsemi FDB86102LZ

N-Channel PowerTrench MOSFET, 100V, 30A, 24m

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Compliance

Lead Free
Lead Free
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
24 mΩ

Dimensions

Height
4.83 mm
Length
10.67 mm
Width
11.33 mm

Physical

Case/Package
TO-263-3
Mount
-55 °C
Number of Pins
3
Weight
IBS

Supply Chain

Lifecycle Status
Production

Technical

Continuous Drain Current (ID)
8.3 A
Drain to Source Breakdown Voltage
100 V
Drain to Source Resistance
18 mΩ
Drain to Source Voltage (Vdss)
18 mΩ
Element Configuration
Single
Fall Time
2.3 ns
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
5.08 mm
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
150 °C
Min Operating Temperature
-55 °C
Nominal Vgs
1.5 V
Number of Channels
1
Number of Elements
1
Power Dissipation
2 W
Rds On Max
24 mΩ
Rise Time
2.1 ns
Threshold Voltage
1.5 V
Turn-Off Delay Time
Compliant
Turn-On Delay Time
6.6 ns

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