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onsemi FDB3632

N-Channel PowerTrench MOSFET 100V, 80A, 9m

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Compliance

Lead Free
Lead Free
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
Compliant

Dimensions

Height
5.08 mm
Length
10.67 mm
Width
9.65 mm

Physical

Case/Package
TO-263-3
Contact Plating
Tin
Mount
Surface Mount
Number of Pins
3
Weight
1.31247 g

Supply Chain

Lifecycle Status
Production

Technical

Continuous Drain Current (ID)
80 A
Current Rating
44 A
Drain to Source Breakdown Voltage
100 V
Drain to Source Resistance
7.5 mΩ
Drain to Source Voltage (Vdss)
100 V
Dual Supply Voltage
100 V
Element Configuration
Single
Fall Time
46 ns
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
6 nF
Max Junction Temperature (Tj)
175 °C
Max Operating Temperature
175 °C
Max Power Dissipation
310 W
Min Operating Temperature
-55 °C
Nominal Vgs
4 V
Number of Channels
1
Number of Elements
1
Packaging
Cut Tape
Power Dissipation
310 W
Rds On Max
9 mΩ
Resistance
9 MΩ
Rise Time
39 ns
Termination
SMD/SMT
Threshold Voltage
4 V
Turn-Off Delay Time
96 ns
Turn-On Delay Time
30 ns
Voltage Rating (DC)
100 V

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