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onsemi FDB12N50TM

N-Channel Power MOSFET, UniFETTM, 500 V, 11.5 A, 650 m, D2PAK

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Compliance

Lead Free
Lead Free
RoHS
650 MΩ

Dimensions

Height
4.83 mm
Length
10.67 mm
Width
IBS

Physical

Case/Package
D2PAK
Mount
-55 °C
Number of Pins
3
Weight
Compliant

Supply Chain

Lifecycle Status
Production

Technical

Continuous Drain Current (ID)
11.5 A
Drain to Source Breakdown Voltage
500 V
Drain to Source Resistance
550 mΩ
Drain to Source Voltage (Vdss)
550 mΩ
Element Configuration
Single
Fall Time
35 ns
Gate to Source Voltage (Vgs)
30 V
Input Capacitance
1.315 nF
Max Operating Temperature
150 °C
Max Power Dissipation
150 °C
Min Operating Temperature
-55 °C
Number of Elements
1
Power Dissipation
165 W
Rds On Max
650 mΩ
Resistance
650 MΩ
Rise Time
650 mΩ
Turn-Off Delay Time
45 ns
Turn-On Delay Time
60 ns

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