跳转到主要内容

onsemi FDB047N10

Power MOSFET, N-Channel, QFET, 100 V, 164 A, 4.7 m, D2PAK

产品详情

Find similar products  

Compliance

Lead Free
Lead Free
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
Compliant

Dimensions

Height
5.08 mm
Length
10.67 mm
Width
11.33 mm

Physical

Case/Package
D2PAK
Mount
Surface Mount
Number of Pins
3
Weight
1.762 g

Supply Chain

Lifecycle Status
Production

Technical

Continuous Drain Current (ID)
120 A
Drain to Source Breakdown Voltage
100 V
Drain to Source Resistance
3.9 mΩ
Drain to Source Voltage (Vdss)
100 V
Element Configuration
Single
Fall Time
244 ns
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
15.265 nF
Max Junction Temperature (Tj)
175 °C
Max Operating Temperature
175 °C
Max Power Dissipation
375 W
Min Operating Temperature
-55 °C
Nominal Vgs
3.5 V
Number of Channels
1
Number of Elements
1
Packaging
Cut Tape
Power Dissipation
375 W
Rds On Max
4.7 mΩ
Resistance
4.7 MΩ
Rise Time
386 ns
Threshold Voltage
3.5 V
Turn-Off Delay Time
344 ns
Turn-On Delay Time
174 ns

合规性文件

购买

Call or Request Quote for Pricing
询价

Need Assistance?

Contact Us