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onsemi FDA59N30

N-Channel Power MOSFET, UniFETTM, 300V, 59A, 56m, TO-3P

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Compliance

Lead Free
Lead Free
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
Compliant

Dimensions

Height
23.8 mm

Physical

Mount
Through Hole
Number of Pins
3
Weight
6.401 g

Supply Chain

Lifecycle Status
Production

Technical

Continuous Drain Current (ID)
59 A
Drain to Source Breakdown Voltage
300 V
Drain to Source Resistance
47 mΩ
Drain to Source Voltage (Vdss)
300 V
Element Configuration
Single
Fall Time
200 ns
Gate to Source Voltage (Vgs)
30 V
Input Capacitance
4.67 nF
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
500 W
Min Operating Temperature
-55 °C
Nominal Vgs
5 V
Number of Channels
1
Number of Elements
1
Power Dissipation
500 W
Rds On Max
56 mΩ
Resistance
56 MΩ
Rise Time
575 ns
Threshold Voltage
5 V
Turn-Off Delay Time
120 ns
Turn-On Delay Time
140 ns

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