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onsemi FDA28N50F

N-Channel Power MOSFET, UniFETTM, FRFET, 500 V, 28 A, 175 m, TO-3P

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Compliance

Lead Free
Lead Free
Radiation Hardening
No
RoHS
175 mΩ

Dimensions

Height
20.1 mm
Length
15.8 mm
Width
IBS

Physical

Mount
-55 °C
Number of Pins
3
Weight
6.401 g

Supply Chain

Lifecycle Status
EOL

Technical

Continuous Drain Current (ID)
28 A
Drain to Source Breakdown Voltage
500 V
Drain to Source Resistance
175 mΩ
Drain to Source Voltage (Vdss)
175 mΩ
Element Configuration
Single
Fall Time
101 ns
Gate to Source Voltage (Vgs)
30 V
Input Capacitance
5.387 nF
Max Operating Temperature
150 °C
Max Power Dissipation
150 °C
Min Operating Temperature
-55 °C
Power Dissipation
310 W
Rds On Max
175 mΩ
Rise Time
137 ns
Turn-Off Delay Time
192 ns
Turn-On Delay Time
Compliant

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