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onsemi FDA28N50

N-Channel Power MOSFET, UniFETTM, 500 V, 28 A, 155 m, TO-3P

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Compliance

Lead Free
Lead Free
Radiation Hardening
No
RoHS
155 MΩ

Dimensions

Height
20.1 mm
Length
15.8 mm
Width
IBS

Physical

Contact Plating
Tin
Mount
-55 °C
Number of Pins
2
Weight
6.401 g

Supply Chain

Lifecycle Status
Production

Technical

Continuous Drain Current (ID)
28 A
Drain to Source Breakdown Voltage
500 V
Drain to Source Resistance
155 mΩ
Drain to Source Voltage (Vdss)
155 mΩ
Element Configuration
Single
Fall Time
110 ns
Gate to Source Voltage (Vgs)
30 V
Input Capacitance
5.14 nF
Max Operating Temperature
150 °C
Max Power Dissipation
150 °C
Min Operating Temperature
-55 °C
Number of Elements
1
Power Dissipation
310 W
Rds On Max
155 mΩ
Resistance
155 MΩ
Rise Time
155 mΩ
Turn-Off Delay Time
126 ns
Turn-On Delay Time
Compliant

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