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onsemi FDA20N50-F109

N-Channel Power MOSFET, UniFETTM, 500 V, 22 A, 230 m, TO-3P

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Compliance

Radiation Hardening
No
RoHS
230 mΩ

Physical

Mount
-55 °C
Number of Pins
3
Weight
6.401 g

Supply Chain

Lifecycle Status
EOL

Technical

Continuous Drain Current (ID)
22 A
Drain to Source Breakdown Voltage
500 V
Drain to Source Resistance
230 mΩ
Drain to Source Voltage (Vdss)
230 mΩ
Element Configuration
Single
Fall Time
105 ns
Gate to Source Voltage (Vgs)
30 V
Input Capacitance
3.12 nF
Max Operating Temperature
OBSOLETE
Max Power Dissipation
150 °C
Min Operating Temperature
-55 °C
Number of Elements
1
Power Dissipation
280 W
Rds On Max
230 mΩ
Rise Time
375 ns
Turn-Off Delay Time
100 ns
Turn-On Delay Time
Compliant

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