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onsemi FDA16N50-F109

N-Channel Power MOSFET, UniFETTM, 500 V, 16.5 A, 380 mΩ, TO-3P

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Compliance

Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
380 mΩ

Physical

Mount
Through Hole
Number of Pins
3
Weight
6.401 g

Supply Chain

Lifecycle Status
Production

Technical

Continuous Drain Current (ID)
16.5 A
Drain to Source Breakdown Voltage
500 V
Drain to Source Resistance
380 mΩ
Drain to Source Voltage (Vdss)
500 V
Element Configuration
Single
Fall Time
80 ns
Gate to Source Voltage (Vgs)
30 V
Input Capacitance
1.945 nF
Max Operating Temperature
150 °C
Max Power Dissipation
205 W
Min Operating Temperature
-55 °C
Number of Elements
1
Power Dissipation
205 W
Rds On Max
380 mΩ
Rise Time
150 ns
Threshold Voltage
5 V
Turn-Off Delay Time
65 ns
Turn-On Delay Time
40 ns

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