跳转到主要内容

onsemi FCPF850N80Z

N-Channel Power MOSFET, SUPERFET II, 800 V, 6 A, 850 m, TO-220F

产品详情

Find similar products  

Compliance

RoHS
850 mΩ

Dimensions

Height
16.07 mm
Length
10.36 mm
Width
IBS

Physical

Case/Package
TO-220-3
Mount
-55 °C
Number of Pins
3
Weight
Compliant

Supply Chain

Lifecycle Status
Production

Technical

Continuous Drain Current (ID)
6:00 AM
Drain to Source Breakdown Voltage
8 A
Drain to Source Resistance
710 mΩ
Drain to Source Voltage (Vdss)
710 mΩ
Element Configuration
Single
Fall Time
4.5 ns
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
19.5 mm
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
150 °C
Min Operating Temperature
-55 °C
Number of Channels
1
Power Dissipation
28.4 W
Rds On Max
850 mΩ
Rise Time
10 ns
Turn-Off Delay Time
40 ns
Turn-On Delay Time
16 ns

合规性文件

购买

Call or Request Quote for Pricing
询价

Need Assistance?

Contact Us