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onsemi FCP20N60

Power MOSFET, N-Channel, SUPERFET, Easy Drive, 600 V, 20 A, 190 m, TO-220

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Compliance

Lead Free
Lead Free
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
190 MΩ

Dimensions

Height
16.3 mm
Length
10.67 mm
Width
4.7 mm

Physical

Case/Package
TO-220-3
Mount
-55 °C
Number of Pins
3
Weight
1.8 g

Supply Chain

Lifecycle Status
Production

Technical

Continuous Drain Current (ID)
20 A
Current Rating
20 A
Drain to Source Breakdown Voltage
600 V
Drain to Source Resistance
190 mΩ
Drain to Source Voltage (Vdss)
190 mΩ
Element Configuration
Single
Fall Time
65 ns
Gate to Source Voltage (Vgs)
30 V
Input Capacitance
20.4 mm
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
150 °C
Min Operating Temperature
-55 °C
Nominal Vgs
5 V
Number of Channels
1
Number of Elements
1
Power Dissipation
208 W
Rds On Max
190 mΩ
Resistance
190 MΩ
Rise Time
190 mΩ
Threshold Voltage
140 ns
Turn-Off Delay Time
Compliant
Turn-On Delay Time
62 ns
Voltage Rating (DC)
IBS

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