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onsemi FCP190N65S3

N-Channel Power MOSFET, SUPERFET III, Easy Drive, 650 V, 17 A, 190 m, TO-220

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Compliance

RoHS
Compliant

Dimensions

Height
20.4 mm

Physical

Case/Package
TO-220
Mount
-55 °C
Weight
1.8 g

Supply Chain

Lifecycle Status
Production

Technical

Continuous Drain Current (ID)
17 A
Drain to Source Breakdown Voltage
650 V
Drain to Source Resistance
159 mΩ
Drain to Source Voltage (Vdss)
159 mΩ
Element Configuration
Single
Gate to Source Voltage (Vgs)
30 V
Max Operating Temperature
150 °C
Min Operating Temperature
150 °C
Number of Channels
1
Power Dissipation
144 W
Turn-Off Delay Time
57 ns
Turn-On Delay Time
20 ns

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