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onsemi FCP190N60

N-Channel Power MOSFET, SUPERFET II, FAST, 600V, 20.2A, 199m, TO-220

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Compliance

Lead Free
Lead Free
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
199 mΩ

Dimensions

Height
16.51 mm
Length
10.67 mm
Width
4.83 mm

Physical

Case/Package
TO-220
Mount
-55 °C
Number of Pins
3
Weight
IBS

Supply Chain

Lifecycle Status
EOL

Technical

Continuous Drain Current (ID)
20.2 A
Drain to Source Breakdown Voltage
650 V
Drain to Source Resistance
199 mΩ
Drain to Source Voltage (Vdss)
199 mΩ
Element Configuration
Single
Fall Time
5 ns
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
2.95 nF
Max Operating Temperature
150 °C
Max Power Dissipation
150 °C
Min Operating Temperature
-55 °C
Number of Elements
1
Power Dissipation
208 W
Rds On Max
199 mΩ
Rise Time
10 ns
Threshold Voltage
2.5 V
Turn-Off Delay Time
64 ns
Turn-On Delay Time
Compliant

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