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onsemi FCP13N60N

N-Channel Power MOSFET, SUPREMOS, FAST, 600 V, 13 A, 258 m, TO-220

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Compliance

Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
258 mΩ

Dimensions

Height
9.4 mm
Length
10.67 mm
Width
4.83 mm

Physical

Case/Package
TO-220
Mount
-55 °C
Number of Pins
3
Weight
IBS

Supply Chain

Lifecycle Status
EOL

Technical

Continuous Drain Current (ID)
13 A
Drain to Source Breakdown Voltage
600 V
Drain to Source Resistance
244 mΩ
Drain to Source Voltage (Vdss)
244 mΩ
Element Configuration
Single
Fall Time
9.8 ns
Gate to Source Voltage (Vgs)
30 V
Input Capacitance
1.765 nF
Max Operating Temperature
150 °C
Max Power Dissipation
150 °C
Min Operating Temperature
-55 °C
Number of Elements
1
Power Dissipation
116 W
Rds On Max
258 mΩ
Rise Time
10.6 ns
Threshold Voltage
2 V
Turn-Off Delay Time
Compliant
Turn-On Delay Time
14.5 ns

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