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onsemi FCP11N60

Power MOSFET, N-Channel, SUPERFET, Easy Drive, 600 V, 11 A, 380 m, TO-220

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Compliance

Lead Free
Lead Free
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
Compliant

Dimensions

Height
9.4 mm
Length
10.1 mm
Width
4.7 mm

Physical

Case/Package
TO-220AB
Contact Plating
Tin
Mount
Through Hole
Number of Pins
3
Weight
1.8 g

Supply Chain

Lifecycle Status
Production

Technical

Continuous Drain Current (ID)
11 A
Current Rating
11 A
Drain to Source Breakdown Voltage
600 V
Drain to Source Resistance
320 mΩ
Drain to Source Voltage (Vdss)
600 V
Element Configuration
Single
Fall Time
56 ns
Gate to Source Voltage (Vgs)
30 V
Input Capacitance
1.49 nF
Max Operating Temperature
150 °C
Max Power Dissipation
125 W
Min Operating Temperature
-55 °C
Number of Elements
1
Power Dissipation
125 W
Rds On Max
380 mΩ
Resistance
380 MΩ
Rise Time
98 ns
Threshold Voltage
5 V
Turn-Off Delay Time
119 ns
Turn-On Delay Time
34 ns
Voltage Rating (DC)
600 V

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