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onsemi FCP110N65F

N-Channel Power MOSFET, SUPERFET II, FRFET, 650V, 35A, 110m, TO-220

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Compliance

RoHS
110 mΩ

Dimensions

Height
16.3 mm
Length
10.67 mm
Width
IBS

Physical

Case/Package
TO-220-3
Mount
-55 °C
Number of Pins
3
Weight
Compliant

Supply Chain

Lifecycle Status
Production

Technical

Continuous Drain Current (ID)
35 A
Drain to Source Breakdown Voltage
650 V
Drain to Source Resistance
110 mΩ
Drain to Source Voltage (Vdss)
110 mΩ
Element Configuration
Single
Fall Time
5.7 ns
Gate to Source Voltage (Vgs)
30 V
Input Capacitance
4.895 nF
Max Operating Temperature
150 °C
Max Power Dissipation
150 °C
Min Operating Temperature
-55 °C
Number of Channels
1
Rds On Max
110 mΩ
Rise Time
21 ns
Turn-Off Delay Time
89 ns
Turn-On Delay Time
31 ns

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