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onsemi FCP099N60E

N-Channel Power MOSFET, SUPERFET II, Easy Drive, 600 V, 37 A, 99 m, TO-220

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Compliance

RoHS
99 mΩ

Dimensions

Height
20.4 mm

Physical

Case/Package
TO-220-3
Mount
-55 °C
Number of Pins
3
Weight
1.8 g

Supply Chain

Lifecycle Status
Production

Technical

Continuous Drain Current (ID)
37 A
Drain to Source Breakdown Voltage
600 V
Drain to Source Resistance
87 mΩ
Drain to Source Voltage (Vdss)
87 mΩ
Element Configuration
Single
Fall Time
22 ns
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
3.465 nF
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
150 °C
Min Operating Temperature
-55 °C
Number of Channels
1
Power Dissipation
357 W
Rds On Max
99 mΩ
Rise Time
23 ns
Turn-Off Delay Time
92 ns
Turn-On Delay Time
Compliant

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