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onsemi FCP067N65S3

N-Channel Power MOSFET, SUPERFET III, Easy Drive, 650 V, 44 A, 67 m, TO-220

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Compliance

REACH SVHC
No SVHC
RoHS
Compliant

Dimensions

Height
20.4 mm

Physical

Case/Package
TO-220-3
Mount
Through Hole
Number of Pins
3
Weight
1.8 g

Supply Chain

Lifecycle Status
Production

Technical

Continuous Drain Current (ID)
44 A
Drain to Source Breakdown Voltage
650 V
Drain to Source Resistance
59 mΩ
Drain to Source Voltage (Vdss)
650 V
Element Configuration
Single
Gate to Source Voltage (Vgs)
30 V
Input Capacitance
3.09 nF
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
312 W
Min Operating Temperature
-55 °C
Number of Channels
1
Power Dissipation
312 W
Rds On Max
67 mΩ
Threshold Voltage
4.5 V
Turn-Off Delay Time
89 ns
Turn-On Delay Time
26 ns

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