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onsemi FCH023N65S3L4

N-Channel Power MOSFET, SUPERFET III, Easy Drive, 650 V, 75 A, 23 m, TO-247 4lead

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Compliance

RoHS
Compliant

Dimensions

Height
25.56 mm

Physical

Case/Package
TO-247-4
Mount
Through Hole
Weight
6.289 g

Supply Chain

Lifecycle Status
Production

Technical

Continuous Drain Current (ID)
75 A
Drain to Source Breakdown Voltage
650 V
Drain to Source Resistance
19.5 mΩ
Drain to Source Voltage (Vdss)
650 V
Element Configuration
Single
Gate to Source Voltage (Vgs)
30 V
Input Capacitance
7.16 nF
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
595 W
Min Operating Temperature
-55 °C
Number of Channels
1
Power Dissipation
595 W
Rds On Max
23 mΩ
Turn-Off Delay Time
130 ns
Turn-On Delay Time
43 ns

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