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onsemi FCD9N60NTM

N-Channel Power MOSFET, SUPREMOS, FAST, 600 V, 9 A, 385 m, DPAK

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Compliance

Lead Free
Lead Free
REACH SVHC
No SVHC
RoHS
385 mΩ

Dimensions

Height
2.39 mm
Length
6.73 mm
Width
6.22 mm

Physical

Case/Package
DPAK
Mount
-55 °C
Number of Pins
3
Weight
IBS

Supply Chain

Lifecycle Status
EOL

Technical

Continuous Drain Current (ID)
9:00 AM
Drain to Source Breakdown Voltage
9 A
Drain to Source Resistance
330 mΩ
Drain to Source Voltage (Vdss)
330 mΩ
Element Configuration
Single
Fall Time
11.5 ns
Gate to Source Voltage (Vgs)
30 V
Input Capacitance
1 nF
Max Operating Temperature
150 °C
Max Power Dissipation
150 °C
Min Operating Temperature
-55 °C
Number of Elements
1
Packaging
Cut Tape
Power Dissipation
92.6 W
Rds On Max
385 mΩ
Rise Time
9.6 ns
Threshold Voltage
3 V
Turn-Off Delay Time
Compliant
Turn-On Delay Time
12.7 ns

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