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onsemi FCD850N80Z

N-Channel Power MOSFET, SUPERFET II, 800 V, 6 A, 850 m, DPAK

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Compliance

RoHS
Compliant

Dimensions

Height
2.517 mm

Physical

Case/Package
DPAK
Mount
Surface Mount
Weight
260.37 mg

Supply Chain

Lifecycle Status
Production

Technical

Continuous Drain Current (ID)
6 A
Drain to Source Breakdown Voltage
800 V
Drain to Source Resistance
710 mΩ
Drain to Source Voltage (Vdss)
800 V
Element Configuration
Single
Fall Time
4.5 ns
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
1.315 nF
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
75 W
Min Operating Temperature
-55 °C
Number of Channels
1
Packaging
Tape & Reel (TR)
Power Dissipation
75 W
Rds On Max
850 mΩ
Rise Time
10 ns
Turn-Off Delay Time
40 ns
Turn-On Delay Time
16 ns

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