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onsemi FCD5N60TM-WS

N-Channel Power MOSFET, SUPERFET®, Easy Drive, 600 V, 4.6 A, 950 mΩ, DPAK

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Compliance

Radiation Hardening
No
RoHS
Compliant

Physical

Case/Package
DPAK
Contact Plating
Tin
Mount
Surface Mount
Number of Pins
3
Weight
260.37 mg

Supply Chain

Lifecycle Status
Production

Technical

Continuous Drain Current (ID)
4.6 A
Drain to Source Breakdown Voltage
600 V
Drain to Source Resistance
950 mΩ
Drain to Source Voltage (Vdss)
600 V
Element Configuration
Single
Fall Time
22 ns
Gate to Source Voltage (Vgs)
30 V
Input Capacitance
600 pF
Max Operating Temperature
150 °C
Max Power Dissipation
54 W
Min Operating Temperature
-55 °C
Number of Elements
1
Power Dissipation
54 W
Rds On Max
950 mΩ
Rise Time
40 ns
Turn-Off Delay Time
47 ns
Turn-On Delay Time
12 ns

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