跳转到主要内容

onsemi FCD4N60TM

N-Channel Power MOSFET, SUPERFET, Easy Drive, 600 V, 3.9 A, 1.2 , DPAK

产品详情

Find similar products  

Compliance

Lead Free
Lead Free
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
1.2 Ω

Dimensions

Height
2.39 mm
Length
6.73 mm
Width
6.22 mm

Physical

Case/Package
DPAK
Contact Plating
Tin
Mount
-55 °C
Number of Pins
3
Weight
260.37 mg

Supply Chain

Lifecycle Status
Production

Technical

Continuous Drain Current (ID)
3.9 A
Current Rating
3.9 A
Drain to Source Breakdown Voltage
600 V
Drain to Source Resistance
1 Ω
Drain to Source Voltage (Vdss)
1 Ω
Dual Supply Voltage
600 V
Element Configuration
Single
Fall Time
30 ns
Gate to Source Voltage (Vgs)
30 V
Input Capacitance
2.517 mm
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
150 °C
Min Operating Temperature
-55 °C
Nominal Vgs
5 V
Number of Channels
1
Number of Elements
1
Packaging
Cut Tape
Power Dissipation
50 W
Rds On Max
1.2 Ω
Resistance
1.2 Ω
Rise Time
1.2 Ω
Termination
45 ns
Threshold Voltage
Compliant
Turn-Off Delay Time
36 ns
Turn-On Delay Time
IBS
Voltage Rating (DC)
600 V

合规性文件

购买

Call or Request Quote for Pricing
询价

Need Assistance?

Contact Us