跳转到主要内容

onsemi FCD360N65S3R0

N-Channel Power MOSFET, SUPERFET III, Easy Drive, 650 V, 10 A, 360 m, DPAK

产品详情

Find similar products  

Compliance

RoHS
Compliant

Dimensions

Height
2.517 mm

Supply Chain

Lifecycle Status
310 mΩ

Technical

Continuous Drain Current (ID)
10 A
Drain to Source Breakdown Voltage
650 V
Drain to Source Resistance
310 mΩ
Drain to Source Voltage (Vdss)
650 V
Gate to Source Voltage (Vgs)
30 V
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Min Operating Temperature
-55 °C
Number of Channels
1
Power Dissipation
83 W
Turn-Off Delay Time
34 ns
Turn-On Delay Time
12 ns

合规性文件

购买

Call or Request Quote for Pricing
询价

Need Assistance?

Contact Us