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onsemi FCB20N60TM

N-Channel Power MOSFET, SUPERFET, Easy Drive, 600 V, 20 A, 190 m, D2PAK

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Compliance

Lead Free
Lead Free
REACH SVHC
No SVHC
RoHS
Compliant

Dimensions

Height
5.08 mm

Physical

Case/Package
D2PAK
Mount
Surface Mount
Number of Pins
3
Weight
1.31247 g

Supply Chain

Lifecycle Status
Production

Technical

Continuous Drain Current (ID)
20 A
Current Rating
20 A
Drain to Source Breakdown Voltage
600 V
Drain to Source Resistance
150 mΩ
Drain to Source Voltage (Vdss)
600 V
Element Configuration
Single
Fall Time
65 ns
Gate to Source Voltage (Vgs)
30 V
Input Capacitance
3.08 nF
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
208 W
Min Operating Temperature
-55 °C
Nominal Vgs
5 V
Number of Channels
1
Number of Elements
1
Packaging
Cut Tape
Power Dissipation
208 W
Rds On Max
190 mΩ
Resistance
190 mΩ
Rise Time
140 ns
Threshold Voltage
5 V
Turn-Off Delay Time
230 ns
Turn-On Delay Time
62 ns
Voltage Rating (DC)
600 V

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