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onsemi FCB199N65S3

N-Channel Power MOSFET, SUPERFET III, Easy Drive, 650 V, 14 A, 199 m, D2PAK

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Compliance

RoHS
Compliant

Dimensions

Height
5.08 mm

Physical

Mount
Surface Mount
Weight
1.31247 g

Supply Chain

Lifecycle Status
Production

Technical

Continuous Drain Current (ID)
14 A
Drain to Source Breakdown Voltage
650 V
Drain to Source Resistance
170 mΩ
Drain to Source Voltage (Vdss)
650 V
Element Configuration
Single
Gate to Source Voltage (Vgs)
30 V
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Min Operating Temperature
-55 °C
Number of Channels
1
Power Dissipation
98 W
Turn-Off Delay Time
52 ns
Turn-On Delay Time
19 ns

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