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onsemi FCA20N60-F109

FCA20N60 Series 600 V 190 mOhm 20 A N-Channel SuperFET MOSFET - TO-3PN

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Compliance

Lead Free
Lead Free
Radiation Hardening
No
RoHS
Compliant

Physical

Mount
Through Hole
Number of Pins
3
Weight
6.401 g

Supply Chain

Lifecycle Status
Production

Technical

Continuous Drain Current (ID)
20 A
Drain to Source Breakdown Voltage
600 V
Drain to Source Resistance
190 mΩ
Drain to Source Voltage (Vdss)
600 V
Element Configuration
Single
Fall Time
65 ns
Gate to Source Voltage (Vgs)
30 V
Input Capacitance
3.08 nF
Max Operating Temperature
150 °C
Max Power Dissipation
208 W
Min Operating Temperature
-55 °C
Number of Elements
1
Power Dissipation
208 W
Rds On Max
190 mΩ
Resistance
190 MΩ
Rise Time
140 ns
Turn-Off Delay Time
230 ns
Turn-On Delay Time
62 ns

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