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onsemi D44H8G

Transistor, Bipolar; Si; NPN; Power; VCEO 60VDC; IC 10A; PD 70W; TO-220; hFE 40; fT 50MHz

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Compliance

Lead Free
Lead Free
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
Compliant

Dimensions

Height
15.748 mm
Length
10.2616 mm
Width
4.826 mm

Physical

Case/Package
TO-220
Contact Plating
Tin
Number of Pins
3
Weight
4.535924 g

Supply Chain

Lifecycle Status
Production

Technical

Collector Base Voltage (VCBO)
60 V
Collector Emitter Breakdown Voltage
60 V
Collector Emitter Saturation Voltage
1 V
Collector Emitter Voltage (VCEO)
60 V
Current Rating
10:00 AM
Element Configuration
10 A
Emitter Base Voltage (VEBO)
5 V
Frequency
50 MHz
Gain Bandwidth Product
50 MHz
hFE Min
19.85 mm
Max Collector Current
10 A
Max Frequency
50 MHz
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
2 W
Min Operating Temperature
-55 °C
Number of Elements
1
Polarity
NPN
Power Dissipation
2 W
Transition Frequency
50 MHz
Voltage Rating (DC)
60 V

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