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onsemi BUV26G

Bipolar (BJT) Single Transistor, NPN, 90 V, 85 W, 20 A

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Compliance

Lead Free
Lead Free
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
Compliant

Dimensions

Height
15.75 mm
Length
10.28 mm
Width
4.82 mm

Physical

Case/Package
TO-220-3
Contact Plating
Tin
Number of Pins
3

Supply Chain

Lifecycle Status
EOL

Technical

Collector Base Voltage (VCBO)
180 V
Collector Emitter Breakdown Voltage
50 V
Collector Emitter Saturation Voltage
1.5 V
Collector Emitter Voltage (VCEO)
90 V
Current Rating
20 A
Element Configuration
Single
Emitter Base Voltage (VEBO)
7 V
Max Breakdown Voltage
90 V
Max Collector Current
20 A
Max Operating Temperature
175 °C
Max Power Dissipation
85 W
Min Operating Temperature
-65 °C
Number of Elements
1
Polarity
NPN
Power Dissipation
85 W
Transition Frequency
330 MHz
Voltage Rating (DC)
90 V

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